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NTGS3446
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 85 ° C)
Gate ? Body Leakage Current (V GS = ± 12 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS(f)
I GSS(r)
20
?
?
?
?
?
?
22
?
?
?
?
?
?
1.0
25
100
? 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I D = 0.25 mA, V DS = V GS
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance
(V GS = 4.5 Vdc, I D = 5.1 Adc)
(V GS = 2.5 Vdc, I D = 4.4 Adc)
Forward Transconductance (V DS = 10 Vdc, I D = 5.1 Adc)
V GS(th)
R DS(on)
g FS
0.6
?
?
?
?
0.85
? 2.5
36
44
12
1.2
?
45
55
?
Vdc
mV/ ° C
m W
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
510
750
pF
Output Capacitance
Transfer Capacitance
(V DS = 10 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
200
60
350
100
SWITCHING CHARACTERISTICS (Note 5)
Turn ? On Delay Time
t d(on)
?
9.0
16
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 10 Vdc, I D = 1.0 Adc,
V GS = 4.5 Vdc, R G = 6.0 W )
t r
t d(off)
t f
?
?
?
12
35
20
20
60
35
Gate Charge
(V DS = 10 Vdc, I D = 5.1 Adc,
V GS = 4.5 Vdc)
Q T
Q gs
Q gd
?
?
?
8.0
2.0
2.0
15
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 4)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(I S = 1.7 Adc, V GS = 0 Vdc)
(I S = 1.7 Adc, V GS = 0 Vdc, T J = 85 ° C)
(I S = 1.7 Adc, V GS = 0 Vdc,
di S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.74
0.66
20
11
9.0
0.01
1.1
?
?
?
?
?
Vdc
ns
m C
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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